Gun diode simulator
Tool for modeling and analyzing GaN diodes.
Explanation of the device modeling and simulation analysis results of the Gunn Diode. Demonstration of self-oscillation in the Gunn Diode. Transient simulation with perturbations is key to observing effects. The inhomogeneous carrier/electric field profile is crucial for self-oscillation. Since transient mobility diffusion is not modeled as stochastic noise, perturbations should be defined by the user.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
